Product Code
Release Date
Product Item Code
Device Manufacturer
Device Type
GaN Power FET
Power Semiconductor
Power Semiconductor - Gallium Nitride (GaN) Floorplan
ExaGaN EXA06C065LDS0 650V GaN Power Floorplan Analysis
This report presents a Power Floorplan analysis of the Exagan EXA06C065LDS0 power gallium nitride (GaN) FET.
This report contains the following detailed information:
  • Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
  • SEM cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
  • Measurements of vertical and horizontal dimensions of major microstructural features
  • Plan-view optical micrograph of the die delayered to the polysilicon layer
  • Identification of major functional blocks on a polysilicon die photograph
  • Table of functional block sizes and percentage die utilization
  • High-resolution top metal and polysilicon die photographs delivered in the CircuitVision software
  • Cost of die and tested packaged die, based on the manufacturing cost analysis of the observed process

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