Product Item Code
Memory - NAND & DRAM
Memory - NAND Peripheral Design
SK Hynix 128L 3D NAND Memory Design Periphery - NAND
The following is a Memory Peripheral Design Analysis on the SK Hynix H25T2TB88E 128-layer 3D NAND flash memory. This device is a TLC NAND memory based on a charge trap flash (CTF) design with a peripheral circuits under cells (PUC) architecture. The SK Hynix H25T2TB88E uses data strobe (DQS) signals to provide a hardware method for synchronizing data DQ in the NV-DDR2/NVDDR3 interface.
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