This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifier and word line driver regions of the SK Hynix 8G-ALDDR4B die found inside a SK Hynix H5AN8G8NCJR-VKC DDR4 SDRAM device. The H5AN8G8NCJR-VKC is a high-speed DDR4 SDRAM that uses an 8n-prefetch architecture to achieve high-speed operation.