Product Item Code
Memory - NAND & DRAM
Memory - DRAM SWD and SA Transistor Characterization
SK Hynix H5AN8G8NCJR-VKC 1x DDR4 Transistor Characterization
This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifier and word line driver regions of the SK Hynix 8G-ALDDR4B die found inside a SK Hynix H5AN8G8NCJR-VKC DDR4 SDRAM device. The H5AN8G8NCJR-VKC is a high-speed DDR4 SDRAM that uses an 8n-prefetch architecture to achieve high-speed operation.
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