Samsung K4H560838C-TCA2 256M DDR SDRAM Partial Circuit Analysis - Circuit Analysis Report

Availability

Published

Product Code

CAR-0206-001

Release Date

09/11/2004

Product Item Code

SAM-K4H560838C-TCA2

Device Manufacturer

Samsung

Device Type

DDR SDRAM

Subscription

Memory - NAND & DRAM

Channel

Memory - DRAM Circuit Analysis

Samsung K4H560838C-TCA2 256M DDR SDRAM Partial Circuit Analysis - Circuit Analysis Report

The Samsung K4H560838C-TCA2 is a 256M Double Data Rate (DDR) Synchronous DRAM organized as 8M x 8 bit x 4 banks, and features a 101.1 mm² die size. The chip consists of two metal layers and two interconnect polysilicon layers. The memory array uses stacked capacitor technology as well as interleaved bitlines and wordlines. The data path and DLL were extracted and analyzed for this report.

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