Samsung Exynos 2600 (2nm SF2) Transistor Characterization

TCR details NMOS and PMOS characteristics on Samsung’s 2 nm SF2 GAA die, profiling key electrical metrics for high‑performance core transistors.

The Transistor Characteristics Report (TCR-2602-803) presents key DC electrical characteristics of logic NMOS and PMOS transistors on the Samsung S5E9956 die. The Samsung S5E9956 die is manufactured using Samsung's 2 nm SF2 gate-all-around (GAA) process. TCR-2602-803 includes Transfer function characteristics (ID vs. VGS), threshold voltage, transconductance, linear transfer characteristics, subthreshold swing, DIBL, Output characteristics (ID vs. VDS), body effect, and gate leakage (IG vs. VGS) for PMOS and NMOS transistors from the high-performance core.