Intel Panther Lake 18A (16th Gen Ultra X7 358H) Transistor Characterization

TCR details NMOS and PMOS transistor characteristics on Intel 18A compute die, featuring RibbonFET GAA and PowerVia backside power delivery.

The Transistor Characteristics Report (TCR-2601-802) presents key DC electrical characteristics for NMOS and PMOS logic transistors from the CPU region on the compute die of the Intel Core Ultra X7 358H SA4RA processor. The compute die utilizes Intel's 18A process technology with Ribbon FET gate-all-around (GAA) transistors, including Power Via backside power delivery technology, which improves density and cell utilization while reducing resistive power delivery. The compute die employs high-k metal gate (HKMG) GAA transistors comprising four stacked silicon nanosheets.