STM STL059N4S8AG 40 V Smart STripFET F8 MOSFET Die Exploratory Analysis

STMicroelectronics STL059N4S8AG is a 40 V automotive‑grade N‑channel MOSFET with very low RDS(on), high current support, and AEC‑Q101 qualification.

STMicroelectronics STL059N4S8AG is an automotive‑grade, 40 V N‑channel power MOSFET that uses Smart STripFET F8 enhanced trench gate technology to achieve extremely low conduction losses, with a typical RDS(on) of 0.45 mΩ (at VGS = 10 V, ID = 60 A) and support for very high drain currents of up to 420 A (at 25 °C case temperature). Total gate charge (Qg) at the same VGS of 10 V is 275 nC. This, together with the RDS(on) of 0.45 mΩ, generates a figure of merit (FoM) value of 123.75 mΩ.nC. The device is essentially designed for power distribution applications, fully AEC‑Q101 qualified, rated for –55 °C to 175 °C operation, housed in wettable flank package, and 100% avalanche tested for robustness.