This report is a structural analysis of the SanDisk SDTNLLCHSM-8192, 64 Gbit multi-level cell (MLC) NAND flash memory, built using a 56 nm flash memory process. The part, extracted from SanDisk’s 8 GB SD memory card SDSDB-8192-A11, contains four 16 Gbit NAND flash dice.

This report contains the following detailed information:
Package photographs, package x-ray photographs, and a die photograph
SEM and TEM cross-sectional micrographs
Measurement of the vertical and horizontal dimensions of the features
TEM energy dispersive x-ray spectroscopy (EDS) and TEM electron energy loss spectroscopy (EELS) analyses of the dielectrics, transistors, and metallization
Scanning capacitance microscopy (SCM) and spreading resistance probing (SRP) of the wells and substrate