Samsung K4L2E165YC 12 Gb 1z nm EUV LPDDR5 Transistor Characterization

Product Code
TCR-2102-801
Release Date
08/04/2021
Availability
Published
Product Item Code
SAM-K3LK4K40CM-BGCP
Device Manufacturer
Samsung
Device Type
LPDDR5
Subscription
Memory - NAND & DRAM
Channel
Memory - DRAM SWD and SA Transistor Characterization
Report Code
TCR-2102-801
This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifiers and wordline drivers of the Samsung K4L2E165YC LPDDR5 SDRAM die found inside a Samsung K3LK4K40CM-BGCP package. The K4L2E165YC die uses Samsung’s new 1z nm DRAM technology node withBLP (SNLP) with EUVL applied and a bit density of 0.273 Gb/mm2.
Memory Subscription

The Memory Analysis You Need

Huge up-front R&D investment requires customers to have up-to-date and accurate competitive intelligence. Figure out the challenges in developing your product strategy first.

Don't miss another update from TechInsights.

All our latest content updates sent to you a few times a month.