Micron MT53D512M64DFL-046 1y nm 8 Gb LPDDR4 Transistor Characterization

Product Code

TCR-1912-801

Release Date

10/02/2020

Availability

Published

Product Item Code

MIC-MT53D512M64D4FL-046

Device Manufacturer

Micron Technology

Device Type

LPDDR4X

Subscription

Memory - NAND & DRAM

Channel

Memory - DRAM SWD and SA Transistor Characterization

Micron MT53D512M64DFL-046 1y nm 8 Gb LPDDR4 Transistor Characterization

This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifiers and word line drivers regions of the Micron Technology MT53D512M64D4FL-046 LPDDR4 SDRAM Z21M die. The MT53D512M64D4FL-046 was extracted from the iPhone 11 Pro A2217 smartphone. This is Micron’s first 1y nm low-power DRAM, with 8 Gb LPDDR4 per die. The die has a bit density of 0.197 Gb/mm2 and a cell size of 0.002438 µm2.

View Table of Contents

Related Analysis	Manufacturer	Analysis Type	Subscription Channel
Intel 144L QLC 1Tb 3D NAND Memory Peripheral Design	Intel	Circuit	Memory - NAND Peripheral Design
Intel 144L QLC 1Tb 3D NAND Advanced Memory Essentials	Intel	Process	Memory - Process
Samsung K4C8E1K6MX 2nd Gen. 8 Gb HBM2 DRAM Memory Floorplan Analysis	Samsung	Floorplan	Memory - DRAM Floorplan Analysis
Intel 29F08T2A0CQK1 144L 3D NAND Memory Floorplan Analysis	Intel	Floorplan	Memory - NAND Floorplan Analysis
Samsung 128L 512 Gb TLC die Memory Floorplan Analysis	Samsung	Floorplan	Memory - NAND Floorplan Analysis
Internal Waveform Overview of the Intel 1 Tb 144L QLC 3D NAND	Intel	Other	Memory - NAND Internal Waveform Overview
Micron Gen2 1y nm 8 Gb GDDR6 Memory Floorplan Analysis	Micron Technology	Floorplan	Memory - DRAM Floorplan Analysis
Samsung 12 Gb 1z EUV LPDDR5 Advanced Memory Essentials	Samsung	Process	Memory - Process
Internal Waveform Overview of the Samsung 92L QLC 3D NAND	Samsung	System	Memory - NAND Internal Waveform Overview
Samsung 1x nm 4 Gb LPDDR4X Memory Floorplan Analysis	Samsung	Floorplan	Memory - DRAM Floorplan Analysis