Product Item Code
Memory - NAND & DRAM
Memory - DRAM SWD and SA Transistor Characterization
Micron MT53D512M64DFL-046 1y nm 8 Gb LPDDR4 Transistor Characterization
This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifiers and word line drivers regions of the Micron Technology MT53D512M64D4FL-046 LPDDR4 SDRAM Z21M die. The MT53D512M64D4FL-046 was extracted from the iPhone 11 Pro A2217 smartphone. This is Micron’s first 1y nm low-power DRAM, with 8 Gb LPDDR4 per die. The die has a bit density of 0.197 Gb/mm2 and a cell size of 0.002438 µm2.
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