Product Item Code
Memory - NAND & DRAM
Memory - DRAM SWD and SA Transistor Characterization
This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifiers and word line driver regions of the Samsung K3UH7H70AM-AGCL LPDDR4X SDRAM. The Samsung K3UH7H70AM-AGCL was extracted from a Samsung Galaxy S10+ smartphone (model SM-G975F).
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