Product Item Code
Memory - NAND & DRAM
Memory - DRAM SWD and SA Transistor Characterization
This report presents key DC electrical characteristics for NMOS and PMOS transistors of the sense amplifier and word line (WL) drivers of the Samsung K4F6S164HA LPDDR4X SDRAM die. The K4F6S164HA die was extracted from a Samsung K3UH6H60AM-AGCJ component comprising four LPDDR4X packages assembled over an application processor in a package-on-package (PoP) module configuration. The Samsung K3UH6H60AM-AGCJ component was removed from a Samsung Galaxy S9+ smartphone (model SM-G965F).
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