Micron D1z 16Gb DDR4 Process Flow Analysis - Memory

Contact Us

Product Code
PFA-2007-802
Release Date
Availability
In Creation
Product Item Code
MIC-MT40A4G4JC-062E_E
Device Manufacturer
Micron Technology
Device Type
DDR4 SDRAM
Subscription
Memory - NAND & DRAM
Channel
Memory - Process Flow Analysis
Report Code
PFA-2007-802
The 1st commercialized D1z DRAM tech node from industry The highest bit density up to date; Micron’s D1z 16 Gb DDR4 die with 0.247 Gb/mm2 bit density (25% increased from Micron D1y 16 Gb DDR4 die) The smallest cell size up to date; Cell size 0.0020 µm2 (17% scaled down from Micron D1y)
Memory Subscription

The Memory Analysis You Need

Huge up-front R&D investment requires customers to have up-to-date and accurate competitive intelligence. Figure out the challenges in developing your product strategy first.

Learn more

Search our analysis and website

Related Analysis Manufacturer Analysis Type Subscription Channel
CircuitVision Analysis (Full) on the Samsung K4A8G085WD-BCTD 1Y DDR4 DRAM (with Cadence Files) Samsung Circuit Memory - DRAM Circuit Analysis
Samsung 128L NAND die (K9AFGD8U0C) Advanced Memory Essentials Samsung Process Memory - Process
Samsung 128L NAND die (K9AFGD8U0C) Memory Peripheral Design Samsung Circuit Memory - NAND Peripheral Design
Samsung 128L NAND die (K9AFGD8U0C) Process Flow Analysis Samsung Circuit Memory - Process Flow Analysis
Samsung 128L NAND die (K9AFGD8U0C) Process Flow Full Samsung Process Memory - Process Flow Analysis
KIOXIA 96L QLC 3D NAND Flash Memory Peripheral Design - NAND SanDisk Circuit Memory - NAND Peripheral Design
Samsung 1y LPDDR4X SDRAM (K3UH7H70AM-AGCL) 8 Gb Circuit Analysis Samsung Circuit Memory - DRAM Circuit Analysis
Analyst Briefing: Memory - Process - 2020 12 Process Memory - Process
SK Hynix 1y LPDDR4X Memory Floorplan Analysis Hynix Floorplan Memory - DRAM Floorplan Analysis
SK Hynix 128l 3D NAND Process Flow Analysis - Memory Hynix Process Memory - Process Flow Analysis