This report presents a Memory Floorplan Analysis of the CXMT CXDQ3A8AM-CG die found inside the CXMT CXDQ3A8AM-CG component. The CXDQ3A8AM-CG component was extracted from the Gloway Technology YCT4U2666D19161C Pro DDR4 product. This is the first DDR4 DRAM products fabbed from CXMT, and the first 8 Gb DRAM die from China. It features 2x tech node (D/R=22nm) used (likely in between Samsung’s 2x and 2y) and has a cell size of 0.0045 um2 with a bit density of 0.102 Gb/mm2.

This report contains the following detailed information:

• Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
• SEM cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
• Plan-view SEM micrograph of the die delayered to the WL and BL layers
• Measurements of vertical and horizontal dimensions of major microstructural features
• Plan-view optical micrograph of the die delayered to the polysilicon layer
• Identification of major functional blocks on a polysilicon die photograph
• Table of functional block sizes and percentage die utilization
• High-resolution top metal and polysilicon die photographs delivered in CircuitVision
• Cost of die and tested packaged die, based on the manufacturing cost analysis of the observed process