Samsung K9XVGY8J5M-CCK0 V4 QLC V-NAND Flash Memory Floorplan Analysis

This report presents a Memory Floorplan Analysis of the Samsung K93KGD8U0M die found inside the Samsung K9XVGY8J5M-CCK0 package. The K9XVGY8J5M-CCK0 was extracted from a Samsung 1 TB SSD 860 QVO with the model number MZ-76Q1T0.

This report contains the following detailed information:

• Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
• SEM bevel micrographs through the memory array at the mid-height to show the general layout and at the interconnect level routing the BL to measure the BL pitch
• SEM cross-sectional micrographs across the BL to show the die general view, including the full height of the memory array, as well as high-magnification SEM images at the top of the array to measure the BL pitch
• SEM cross-sectional micrographs across the WL to show the full height of the memory array
• Measurements of vertical and horizontal dimensions of major microstructural features
• Plan-view optical micrograph of the die delayered to the polysilicon layer
• Identification of major functional blocks on the polysilicon layer die photograph
• Table of functional block sizes and percentage die utilization
• High-resolution top metal and polysilicon level die photographs delivered in the CircuitVision software