Micron 1z 16 Gb DDR4 SDRAM Advanced Memory Essentials

Product Code

AME-2007-801

Release Date

16/09/2020

Availability

Published

Product Item Code

MIC-MT40A4G4JC-062E_E

Device Manufacturer

Micron Technology

Device Type

DDR4 SDRAM

Subscription

Memory - NAND & DRAM

Channel

Memory - Process

Micron 1z 16 Gb DDR4 SDRAM Advanced Memory Essentials

This is an Advanced Memory Essentials Analysis of the Micron MTA36ASF8G72PZ-2G9E1 16 Gb DDR4 SDRAM device and the MT40A4G4JC-062E:E die found inside this component. This is the first 1z DDR4 DRAM product fabbed by Micron. A 1z technology node (D/R=15 nm) is used with a cell size of 0.0020 µm² and a bit density of 247.1 Mb/mm².

View Table of Contents

Download Sample Report

Related Analysis	Manufacturer	Analysis Type	Subscription Channel
Intel 144L QLC 1Tb 3D NAND Memory Peripheral Design	Intel	Circuit	Memory - NAND Peripheral Design
Intel 144L QLC 1Tb 3D NAND Advanced Memory Essentials	Intel	Process	Memory - Process
Samsung K4C8E1K6MX 2nd Gen. 8 Gb HBM2 DRAM Memory Floorplan Analysis	Samsung	Floorplan	Memory - DRAM Floorplan Analysis
Intel 29F08T2A0CQK1 144L 3D NAND Memory Floorplan Analysis	Intel	Floorplan	Memory - NAND Floorplan Analysis
Samsung 128L 512 Gb TLC die Memory Floorplan Analysis	Samsung	Floorplan	Memory - NAND Floorplan Analysis
Internal Waveform Overview of the Intel 1 Tb 144L QLC 3D NAND	Intel	Other	Memory - NAND Internal Waveform Overview
Micron Gen2 1y nm 8 Gb GDDR6 Memory Floorplan Analysis	Micron Technology	Floorplan	Memory - DRAM Floorplan Analysis
Samsung 12 Gb 1z EUV LPDDR5 Advanced Memory Essentials	Samsung	Process	Memory - Process
Internal Waveform Overview of the Samsung 92L QLC 3D NAND	Samsung	System	Memory - NAND Internal Waveform Overview
Samsung 1x nm 4 Gb LPDDR4X Memory Floorplan Analysis	Samsung	Floorplan	Memory - DRAM Floorplan Analysis