The Advanced Memory Essentials (AME) deliverable for NAND Flash chips comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the following image folders:

• Downstream product teardown
• Package photographs and X-rays, top metal and polysilicon level die photographs
• SEM bevel
• Memory array bevel
• Periphery at the polysilicon level
• Memory and periphery at metal layers
• SEM cross section along the word line (WL) and bit line (BL) of the general device structure, metals, dielectrics, and memory stacks
• TEM image folders
• TEM bevel in the memory array
• TEM cross section along bit line
• TEM cross section along word line

The results of TEM-EDS analyses are included in the AME summary document. The AME deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors.