Renesas R7F702300BFABA-C TSMC 28 nm eFlash Memory Floorplan Analysis

Renesas R7F702300BFABA-C TSMC 28 nm eFlash Memory Floorplan Analysis

 
Share This Post
 
 

This is a Memory Floorplan Analysis (MFR) of the TSMC R7F702300B die with a memory capacity of 16 MB and 28 nm HPL technology. Within the eFlash macro, memory sub-arrays take about 69% of the area, while memory array with array peripherals covers about 84% of the macro space.

Read the full report

 

TechInsights

 
LinkedIn
X
YouTube
App Store
Google Play Store
 
 
EcoVadis
ISO 27001 Certified
 
Upcoming Webinar Starts in
00 Days
:
00 Hrs
:
00 Min
Memory Market Update September 9, 2026 • 11:00 a.m. EDT
Save Your Spot