
Magnetoresistive random access memory (MRAM) combines the speed and durability of SRAM and the non-volatility of Flash-onto a "single" chip. MRAM uses magnetic polarization, rather than electric charge, to store information, eliminating leakage and wear-out. It allows a single memory solution to replace multiple types of memory on a single chip-helping to enable faster, lower power, more cost-effective solutions for a variety of applications.