SK hynix MDHD5822036 D1b 16 Gb LPDDR5X Transistor Characterization

TCR details NMOS and PMOS characteristics in SK hynix LPDDR5X die, profiling sense amplifier and word line driver transistor performance.

The Transistor Characteristics Report (TCR-2602-802) presents Key DC transistor characteristics for the NMOS and PMOS transistors located in the sense amplifier (SA) and word line drivers (WLD) of the SK hynix LPDDR5X MDHD5822036 die, extracted from the SK hynix H58G76DKBH-X202 LPDDR5X package on the AAP-AN00 5G Honor smartphone. The MDHD5822036 die is produced using SK hynix D1β generation DRAM process. Transistors were measured at 85ºC. The transistor characteristics include data for five NMOS and five PMOS transistors from the SA and WLD regions. The following characteristics are included in the report: Transfer function characteristics (ID vs. VGS), threshold voltage, transconductance, linear transfer characteristics, subthreshold swing, DIBL, Output characteristics (ID vs. VDS), body effect, and gate leakage (IG vs. VGS).