The Efficient Power Conversion EPC2619 device includes a single gallium nitride (GaN) power high electron mobility transistor (HEMTs) die with a continuous rating voltage of 100 V, the power GaN transistors operate in enhancement mode (normally-off) and exhibit a typical 3.3 mΩ on-resistance (RDS(ON)) at 5 V VGS bias.
OpenAI Jalapeño: The Architectural Decisions Behind Its Inference Efficiency
OpenAI Jalapeño's benchmark results have attracted attention, and a closer look at the design choices provides important context for understanding the performance. This article presents TechInsights’ commentary on the decisions disclosed at Hot Chips.
US Hyperscalers Now Drive 15 of the World’s Top 20 Datacenter Markets
Where are hyperscalers concentrating datacenter capacity? Q1 2026 data shows why 15 of the top 20 markets are in the US and which cloud providers lead.
High Bandwidth Memory in NVIDIA HGX B300: Examining the Micron HBM3E Package
Memory packaging has become a primary differentiator in AI accelerator performance. We take a look at Micron's HBM3E packaging architecture for the NVIDIA HGX B300.
