Availability
Published
Product Code
PFR-2010-804
Product Item Code
STM-MASTERGAN1
Device Manufacturer
STMicroelectronics
Device Type
GaN Power IC
Subscription
Power Semiconductor
Channel
Power Semiconductor - Gallium Nitride (GaN) Floorplan
STMicroelectronics MASTERGAN1600 V Half-Bridge Driver with Two e-Mode GaN HEMTs Power Floorplan Report
This report presents a Power Floorplan analysis of the STMicroelectronics MASTERGAN1 device. The MASTERGAN1 features a 600 V, 150 m ΩON-resistance half-bridge circuit with gallium nitride (GaN) high electron mobility transistors (HEMTs), a 650 V drain-source breakdown voltage (V(BR)DS), and a silicon-based bipolar-CMOS-DMOS (BCD) gate driver [2]. The focus of this report is on the GaN HEMT dies.
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