ON Semi NVHL080N120SC1 1200V SiC Power Floorplan Analysis

Availability

Published

Product Code

PFR-2010-802

Release Date

24/11/2020

Product Item Code

ONS-NVHL080N120SC1

Device Manufacturer

On Semi

Device Type

SiC Power FET

Subscription

Power Semiconductor

Channel

Power Semiconductor - Silicon Carbide (SiC) Floorplan

ON Semi NVHL080N120SC1 1200V SiC Power Floorplan Analysis

This report presents an analysis of the ON Semiconductor NVHL080N120SC1 power silicon carbide (SiC) based MOSFET. The NVHL080N120SC1 is a 1200 V, N-channel enhancement mode MOSFET. The device features maximum continuous S/D current of 31 A and 80 mΩ S/D ON-resistance at 25 C° and up to 132 A pulsed. The NVHL080N120SC1 is designed mainly for automotive on board chargers and automotive DC/DC converters for electric and hybrid vehicles.

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