Cree is a market leader in wide band gap semiconductors for power and RF applications. The CGHV59350 is a 350 W, 5.9 GHz GaN HEMT device designed for C-band radar systems. The analysis includes structural analysis of the package and of the GaN die, including detailed TEM analysis of the GaN epitaxial layers. The complete PEF deliverable includes a one-page summary of observed device metrics and salient features, supported by the following unannotated image folders:

• Package optical photographs, package X-ray images, die photographs, optical photographs of die features
• Scanning electron microscopy (SEM) plan-view images of the device delayered to the gate level
• Exploratory cross-sectional plan-view SEM images of the device structure
• Detailed cross-sectional scanning microwave impedance microscopy (sMIM) analysis of the dopant structures
• The image set for a standard Power Essentials project is derived from a delayered sample for SEM planar analysis, a single plane of cross-sectioning for SEM structural analysis, and a single sMIM sample for the detailed structural analysis. Value add information such as additional planes of cross-sectioning, may be included on a case-by-case basis
  

The Power Essentials deliverable provides basic competitive benchmarking information and enables cost-effective tracking of multiple competitors’ technology.