This report is a process review of the Mitsubishi Electric M81738FP high voltage integrated circuit (HVIC), a 1200 V power MOSFET and IGBT module driver for half bridge applications, commonly used to drive inverter systems with 400 V AC output. This report contains the following information: package photographs, package X-ray images, die markings, top metal die photograph, and polysilicon die photograph, identification of major functional blocks on a top metal die photograph, measurement of vertical and horizontal dimensions of the major microstructural features, SEM images of dielectric materials, metallization, transistors, isolation, wells, and substrate, TEM images of dielectric materials, metallization, transistors, isolation, and substrate, SCM plots of the differently doped regions in the device wells and the substrate, with the corresponding atomic force microscope (AFM) topographical plot provided as required for clarity, and SRP measurements of the substrate doping type and carrier concentration.