Navitas Semiconductor NV6245C 650V 275mΩ E-Mode GaN-on-Silicon HEMT Power Essentials Summary
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This report presents a Power Essentials analysis of the Navitas Semiconductor NV6245C device found in the Baseus 130 W GaN5 Pro Charger. NV6245C, as one of the initial family of GaNSense half-bridge ICs, includes two GaN power high electron mobility transistors (HEMTs) dies and two silicon (Si) gate driver dies. It features a 650 V continuous rating voltage, typical 275 mΩ on-resistance (RDS(ON)) enhancement mode (normally-off) power transistors in both high-side (HS) and low-side (LS) GaN dies.
