Innoscience ISG3201 100 V SolidGaN Integrated H-Bridge Power Essentials

Access a power essentials analysis of the ISG3201, a highly integrated 100 V half-bridge device from Innoscience’s SolidGaN family.

The ISG3201 is a highly integrated 100 V half-bridge device from Innoscience’s SolidGaN family that combines two typically 2.4 mΩ enhancement-mode gallium nitride (GaN) high electron mobility transistors (HEMTs) with a gate driver in a compact 6.5 mm × 5.0 mm flip-chip land grid array (FC-LGA) package. Designed for high-efficiency power conversion, it features fast switching with a typical 17 ns propagation delay, supports up to 60 A continuous current, and includes integrated bootstrap and decoupling capacitors to reduce external components and parasitic inductance.