Avago FH513-4KN4 Power Amplifier Die (AFEM-8234) RFIC Process Analysis

Avago FH513-4KN4 Power Amplifier Die (AFEM-8234) RFIC Process Analysis

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The FH513_4KN4 RF power amplifier die was extracted from the Avago AFEM-8234 MHB L-PAMiD RFFE module. This RFIC process analysis (RFP) was performed on samples removed from the Apple iPhone 15 Pro 5G smartphone (A2848) smartphone. The FH513_4KN4 die is manufactured by Avago and uses a (100) GaAs substrate with a final thickness of 150 µm. The PA blocks use heterojunction bipolar transistors (HBT). The report focuses on the RF circuit fabrication process. It provides process, substrate and transistor type identification, the critical dimensions, cross-sectional and layer structure along with material identification, thicknesses of contacts, substrate and metal layers, and dimensions affecting the device parasitics for the RFPA transistor.

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