Availability
Published
Product Code
AME-2104-801
Release Date
Product Item Code
HYN-H5ANAG8NCJR-XNC
Device Manufacturer
Hynix
Device Type
DDR4 SDRAM
SK Hynix H5ANAG8NCJR-XNC 1z nm 16 Gb DDR4 DRAM Advanced Memory Essentials
The concise analysis summary report of critical device metrics, transmission electron microscopy-based energy dispersive X-ray spectroscopy (TEM-EDS) and TEM-based electron energy loss spectroscopy (TEM-EELS) results, and salient features, supported by the following image folders:
  • Package photographs and X-rays, top metal and polysilicon die photographs
  • SEM cross section along the word line (WL) and the bit line (BL) of the ReRAM module
  • TEM cross section along the BL direction (BLD)
  • TEM cross section along the WL direction (BLD)
  • SEM bevel
    • Memory array bevel
    • Memory periphery at the polysilicon gate level
    • Memory periphery at the polysilicon gate level
    The results of TEM-EDS analyses are included in the AME summary document. The AME deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors.
 

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