This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifiers and word line drivers regions of the Micron Technology MT53D512M64D4FL-046 LPDDR4 SDRAM Z21M die. The MT53D512M64D4FL-046 was extracted from the iPhone 11 Pro A2217 smartphone. This is Micron’s first 1y nm low-power DRAM, with 8 Gb LPDDR4 per die. The die has a bit density of 0.197 Gb/mm2 and a cell size of 0.002438 µm2.