Product Code
MFR-1903-801
Release Date
21/06/2019
Availability
Published
Product Item Code
SAM-K4ZAF325BM-HC14
Device Manufacturer
Samsung
Device Type
GDDR6
Subscription
Memory - NAND & DRAM
Channel
Memory - DRAM Floorplan Analysis
Samsung K4ZAF325BM-HC14 1x nm 16 Gb GDDR6 SDRAM Memory Floorplan Analysis
This report presents a Memory Floorplan Analysis of the Samsung K4Z80165BM die found inside the Samsung K4ZAF325BM-HC14 package.

This report contains the following detailed information:
  • Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
  • SEM cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
  • Plan-view SEM micrograph of the memory array delayered to active, WL, and BL layers
  • Measurements of vertical and horizontal dimensions of major microstructural features
  • Plan-view optical micrograph of the die delayered to the polysilicon layer
  • Identification of major functional blocks on a polysilicon die photograph
  • Table of functional block sizes and percentage die utilization
  • High-resolution top metal and diffusion level die photographs delivered in the CircuitVision software

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