onsemi NCP58921 650 V 50 mΩ GaN Switch with Driver Die Exploratory Analysis

onsemi NCP58921 integrates a 650 V GaN HEMT and silicon driver, delivering high‑performance switching for advanced power conversion designs.

onsemi NCP58921 is a 650 V, 50 mΩ GaN power switch with an integrated gate driver, which combines a GaN HEMT transistor die and a high-speed silicon driver die in one compact package. This configuration is expected to achieve superior performance in comparison with the monolithic GaN power modules. Applications include power conversion, high power density power supplies, all double-ended topologies (half-bridges, full-bridge, LLC), active clamp flyback, high-voltage synchronous buck converter, high-voltage synchronous boost converter, two-switch forward converter, two-switch flyback converter, synchronous PFC stage, and totem pole PFC.