Efficient Power Conversion EPC2308 GaN HEMT Power Package Analysis
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This report presents a power package analysis (PKG) of the Efficient Power Conversion EPC2308 GaN HEMT. Features include epoxy around sides but exposed substrate which can be used as a thermal pad to upper surface, ~20% increase in size compared to wafer level device with minimal inductance and resistance increase, and junction to case thermal resistance lower than wafer level equivalents with junction to board seeing a small increase.
