Bite-sized Webinar On-Demand: A Comparison of GaN Technology Approaches in USB-C Power Adapters
Bite-sized Webinar On-Demand:
A Comparison of GaN Technology Approaches in USB-C Power Adapters
Gallium nitride (GaN) offers compelling advantages in terms of efficiency for adapter and other power supply products, but achieving these efficiencies in a cost-effective manner can be challenging.
TechInsights has examined several GaN design wins in wall charger technology. This 22-minute presentation provides a quick comparison of the different GaN integration strategies that we have observed in recent USB-C adapters.
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The semiconductor industry is developing new power process technologies using Silicon Carbide (SiC) and Gallium Nitride (GaN) that are smaller and more efficient, with lower losses and higher breakdown voltage. Silicon (Si) offerings in this space are very mature, but we continue to see noteworthy innovations. This subscription-based service provides you access to our analysis on these cutting-edge products.
At the end of Part 2 of the blog we had reached 2009 and the 40-nm generation; which put TSMC out of sync with other companies, who were marketing their 45-nm product. That discrepancy continued with the usual 70% shrink to the next node, 28-nm for TSMC and 32-nm for IDMs such as Intel and IBM.
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