Micron Technology MT40A1G8SA-062E 1x nm DDR4 SDRAM Transistor Characterization of the Word Line Drivers and Sense Amplifiers

Product Code
TCR-1805-801
Release Date
13/12/2018
Availability
Published
Product Item Code
MIC-MT40A1G8SA-062E
Device Manufacturer
Micron Technology
Device Type
DDR4 SDRAM
Subscription
Memory - NAND & DRAM
Channel
Memory - DRAM SWD and SA Transistor Characterization
Report Code
TCR-1805-801
This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifier and word line driver regions of the Micron Technology MT40A1G8SA-062E DDR4 SDRAM die. This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifier and word line driver regions of the Micron Technology MT40A1G8SA-062E DDR4 SDRAM die.The MT40A1G8SA-062E is classified as a 1x nm (19 nm process node technology device, using half the minimum pitch in the chip). The die is manufactured using a four-metal, one polysilicon CMOS (copper (Cu)) process (one tungsten (W), two Cu, and one aluminum (Al) interconnect levels), including Al bond pads and wire bonds.
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