The FX 5700 Ultra is fabricated using a nine metal, single polysilicon, twin-well CMOS process in a P-type substrate. The part features 65 nm minimum gate length NMOS and PMOS transistors and polycide resistors. Fluorinated Silicate Glass (FSG), oxide, and silicon nitride interlevel dielectrics are used with shallow trench isolation. The analysis includes: Package photos, package x-ray, die markings and an annotated die photograph, Package cross-sectional micrographs, Measurement of vertical and horizontal dimensions of major microstructural features, FESEM cross-sectional micrographs of dielectric materials, major features and transistors Analysis of selected layout features