This report presents a Power Essentials (PEF) analysis of the ON Semiconductor FCH023N65S3 SUPERFET III. The FCH023N65S3 is a 700 V high-voltage super-junction N-channel MOSFET utilizing charge balance technology for low on-resistance and lower gate charge performance. It is designed for 650 V and 65 A operation, with an RDSON of 23 mohm. Its targeted applications are telecom and industrial power supplies, UPS and solar power. The complete PEF deliverable includes a one-page summary of observed device metrics and salient features, supported by the following unannotated image folders:

• Package optical photographs, package X-ray images, die photographs, optical photographs of die features
• Scanning electron microscopy (SEM) plan-view images of the device delayered to the gate level
• Exploratory cross-sectional plan-view SEM images of the device structure
• Detailed cross-sectional scanning microwave impedance microscopy (sMIM) analysis of the dopant structures
• The image set for a standard Power Essentials project is derived from a delayered sample for SEM planar analysis, a single plane of cross-sectioning for SEM structural analysis, and a single sMIM sample for the detailed structural analysis. Value add information such as additional planes of cross-sectioning, may be included on a case-by-case basis
  

The Power Essentials deliverable provides basic competitive benchmarking information and enables cost-effective tracking of multiple competitors’ technology.