This report presents a memory floorplan analysis (MFR) of the Micron Technology MT29F4T08GMLCEJ4-QA_C 176L QLC 3D NAND flash memory.
This report contains the following detailed information:

• Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
• SEM cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
• SEM plan-view micrographs at active, word line (WL), and bit line (BL) levels from a beveled sample
• Measurements of vertical and horizontal dimensions of major microstructural features
• Plan-view optical micrograph of the die delayered to the polysilicon layer
• Identification of major functional blocks on a polysilicon die photograph
• Table of functional block sizes and percentage die utilization
• High-resolution top metal and diffusion level die photographs delivered in the CircuitVision software