Availability
Published
Product Code
MFR-2109-803
Release Date
Product Item Code
SAM-K3UH7H70BM-AGCL
Device Manufacturer
Samsung
Device Type
LPDDR4X
Samsung K3UH7H70BM-AGCL 8Gb 1z LPDDR4X Memory Floorplan Analysis
This report presents a Memory Floorplan Analysis of the Samsung K3UH7H70BM-AGCL 8GB 1z LPDDR4X die found inside the Vivo S10 V2121A handset. This report contains the following detailed information:
  • Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
  • SEM cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
  • Measurements of vertical and horizontal dimensions of major microstructural features
  • Plan-view optical micrograph of the die delayered to the polysilicon layer
  • Identification of major functional blocks on a polysilicon die photograph
  • Table of functional block sizes and percentage die utilization
  • High-resolution top metal and polysilicon die photographs delivered in the CircuitVision software
  • Cost of die and tested packaged die, based on the manufacturing cost analysis of the observed process
 

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