This is an Imager Process Review of the Toshiba 1.4 µm BSI CMOS image sensor extracted from the Fujifilm F550 EXR. In addition to being back illuminated, the device features a diagonal pixel array and novel use of TSV's. This report provides a thorough layout and cross-sectional analysis of the general logic and pixel to help understand how the sensor is fabricated. The focus is on the elements specific to image sensors such as microlenses, color filters, pixel architecture, and photocathode. Analysis of the pixel is parallel and perpendicular to the column outline, to show the structure of the pixel array elements. Detailed images focus on the aperture, transistor gate structure, anti-reflective coatings, and photocathode.