This report presents a basic functional analysis of the RDA Microelectronics RDA8851A, which is a high performance, highly integrated SoC solution for low cost, low power GSM/GPRS mobile phones. The core die of RDA8851A is analyzed in this report. The RDA8851A package encapsulates three dies. The core die marked as RDA8809 is recognized to be fabricated in a CMOS 65 nm process with seven copper interconnect layers, one aluminum interconnect level, and one polysilicon layer to form the transistor gates. Shallow trench isolation (STI) is used for the transistor isolations. The metal 2 to 7 interconnects use a dual damascene process, while a single damascene process with W contact is used for metal 1. The minimum contacted gate pitch is 0.24 ?m, with a minimum metal 1 pitch of 0.17 ?m. It is very likely that either Chartered or UMC foundries was the die manufacturer.