Availability
Published
Product Code
CWR-1103-801
Release Date
Product Item Code
SAM-K4B2G0846D-HCH9
Device Manufacturer
Samsung
Device Type
DDR3 SDRAM
Samsung K4B2G0846D-HCH9 Focused - Process Cell Analysis Report
The report focuses on the DRAM cell of Samsung's K4B2G0846D-HCH9 - the 3X nm generation. This report contains extensive TEM plan view and cross sectional analysis and is focused on the key technology related to memory fabrication and performance. Including the general structure, detailed analysis of the active silicon and wordline, microcapacitor structure and materials analysis, memory cell layout, metallization, and logic. Download the preliminary table of contents for more details.
 

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