Innoscience INN650D080BS 650 V 60 mΩ GaN

Innoscience INN650D080BS 650 V 60 mΩ GaN

 
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This report provides an analysis and emulation of the process flow and integration used in the manufacturing of the Innoscience INN650D080BS 650 V 60 mΩ GaN-on-silicon enhancement mode high-electron mobility transistor (HEMT).

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