STMicroelectronics SCTH90N65G2V-7 650 V Silicon Carbide Power MOSFET Power Essentials Summary

Product Code
PEF-2005-801
Release Date
26/06/2020
Availability
Published
Product Item Code
STM-SCTH90N65G2V-7
Device Manufacturer
STMicroelectronics
Device Type
SiC Power FET
Subscription
Power Semiconductor
Channel
Power Semiconductor - Power Essentials
Report Code
PEF-2005-801
This report presents an analysis of the STMicroelectronics SCTH90N65G2V-7 power silicon carbide (SiC) based MOSFET. The SCTH90N65G2V-7 is a 650 V, 116 A, N-channel enhancement mode MOSFET developed using STMicroelectronics’ advanced and innovative second generation MOSFET technology, featuring remarkably low ON-resistance per unit area and very good switching performance.
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