Product Code
AME-2102-802
Availability
Published
Product Item Code
SAM-S3NSN4VX
Device Manufacturer
Samsung
Samsung 2nd gen. 45 nm Split Gate eFLASH Advanced Memory Essentials
This field is used for the Long Desc for the Report Store Item in the eStore.This field is used for the Long Desc for the Report Store Item in the eStore.The Advanced Memory Essentials (AME) deliverable for NAND flash chips comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the following image folders:
- Downstream product teardown
- Package X-rays, top metal and poly die photographs, non-invasive optical photos of die features
- SEM bevel through the logic region and NAND flash
- SEM cross section of the general device structure, BEOL (metals, dielectrics) and FEOL structures
- One (or two) TEM cross sections, orthogonal to the word and/or bit lines, showing the NAND flash array cells, lower metals and dielectrics, transistor gates, isolation, and other FEOL features
- TEM bevel through the NAND flash
The authoritative information platform to the semiconductor industry.
Discover why TechInsights stands as the semiconductor industry's most trusted source for actionable, in-depth intelligence.
1891 Robertson Rd #500, Nepean, ON K2H 5B7
Copyright © 2024 TechInsights Inc. All rights reserved.