TSMC Goes Big, Samsung Small at 3 nm

The back half of 2023 is notable for the delivery of the first 3 nm products. TSMC’s 3 nm FinFET process showed up in the iPhone 15 in the form of its A17 application processor, and Samsung released the first 3 nm gate-all-around (GAA) nanosheet (NS) chip as a bitminer part.

Despite Samsung’s media machine claiming high-volume 3 nm production last year, little or no information was available as to what the products would be. Thanks to our parts research and procurement team, we found it in a MicroBT bitminer part in a WhatsMiner M56S++ cryptocurrency mining rig.

Samsung took a cautious route for its first GAA process (SF3E) by launching a bitminer part containing no SRAM, simplifying process integration, and reducing defect risk in a pipe-cleaner product. Putting a 3 nm GAA technology into production this year gives the company a 2-year lead over TSMC and a year over Intel’s predicted 2024 RibbonFET launch.

The caution also applies to the cell design; basically, the nanosheet stacks replace FinFETs, and above them the lower and upper metallization is almost the same as in the 4 nm SF4E process.

TSMC showed caution in their own way by continuing their FinFET evolution (as would be expected for a high-profile processor such as the A17), pushing the technology down to 3 nm. Needless to say, TechInsights had no trouble sourcing this part. The company plans to introduce their GAA process at 2 nm in 2025.