Samsung K4ZAF325BC-SC20 GDDR6 DRAM Memory Floorplan Analysis

Samsung K4ZAF325BC-SC20 GDDR6 DRAM Memory Floorplan Analysis

 
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This report presents a Memory Floorplan Analysis of the Samsung K4Z80165BC found inside Samsung K4ZAF325BC-SC20. The K4ZAF325BC-SC20 was extracted from the Gigabyte GeForce RTX 4060 Ti AERO OC 16 G graphics card. The Samsung K4Z80165BC die is 8.18 mm × 4.44 mm (36.32 mm2) large as measured from the die seals or 8.23 mm × 4.50 mm (37.03 mm2) for the whole die. The die was manufactured by Samsung using its 1z nm generation stacked DRAM CMOS process, employing buried word line (WL) cell array transistors (BCAT) with metal gates. The bit lines (BLs) and WLs are at pitches of 47 nm and 41 nm, respectively.

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