Power GaN HEMT Epitaxy Structures Roundup
Discover how evolving power semiconductor technologies, especially GaN HEMTs, are enhancing device performance. This article explores GaN epitaxy structures from leading manufacturers, offering insights into their impact on reliability and efficiency.
Power semiconductor technologies are evolving continuously to meet rising application demands, and manufactures have been implementing process and design changes accordingly to provide improvements in device performance and figures-of-merits. Gallium nitride (GaN) power high-electron-mobility transistors (HEMTs) have been experiencing increased adoption in various applications. Currently, commercial power GaN HEMTs employ GaN layers that are epitaxially grown on sapphire or silicon (Si) substrates, and the epitaxy stack plays a large role in the device reliability and performance. This article provides a deep dive into various GaN epitaxy structures from devices from selected manufacturers that TechInsights has analyzed. The detailed description of the functions of these additional layers are described as they are presented in the following sections.
