Innoscience INN650D080BS 650 V 60 mΩ GaN-on-Silicon Enhancement Mode HEMT Power Essentials
This report presents a power essentials summary (PEG) of the Innoscience INN650D080BS 650 V 60 mΩ GaN-on-Silicon Enhancement Mode HEMT. The INN650D080BS is a 650 V, 60 mΩ (at gate voltage 6 V), enhancement mode gallium nitride (GaN), power high electron mobility transistor (HEMT) capable of operating at a continuous current of 29 A featuring ESD safeguard. The device is designed for AC-DC and DC-DC converters, BCM/DCM totem pole PFC, fast battery charging, high density and high efficiency power conversion.
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