Cissoid CMT-PLA9869 1200 V 40 mΩ SiC Floorplan Analysis
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This report presents a Power Floorplan Analysis of the CISSOID CMTPLA9869 device. The CMT-PLA9869 is a 1200 V, silicon carbide (SiC)-based power MOSFET.
This report presents a Power Floorplan Analysis of the CISSOID CMTPLA9869 device. The CMT-PLA9869 is a 1200 V, silicon carbide (SiC)-based power MOSFET.
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